IEEE Electron Device Letters · 2001 · 38 citations · 10 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsRadio-frequency Integrated CircuitsBreakdown VoltageHigh-voltage BreakdownLateral Diffused Metal-oxide-semiconductor Power AmplifiersPower MosfetsRadio Frequency Power AmplifiersRf Cmos Design
We have fabricated a SOI laterally diffused MOSFET that is designed for use in radio frequency power amplifiers for wireless system-on-a-chip applications. The device is fabricated on a thin-film SOI wafer using a process that is suitable for integration with SOI CMOS. An under-source body contact is implemented and both a high breakdown voltage and a high f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> are attained. The device performance compares favorably with bulk silicon rf power MOSFETs. For a gate length of 0.7 μm the device f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> is 14 GHz, f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> is 18 GHz, and the breakdown voltage approaches 25 V.
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