Excitonic Recombination Processes in Undoped and Doped Wurtzite GaN Films Deposited on Sapphire Substrates

Experimental Proof of the Existence of a New Electronic Complex in Silicon

J. R. Haynes · Physical Review Letters · 1960 · 608 citations

Natural Sciences, Physics, Condensed Matter Physics +7

Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers

R. Dingle, D. D. Sell, S. E. Stokowski et al. · Physical review. B, Solid state · 1971 · 526 citations

Engineering, Materials Engineering, Materials Science +17

Temperature dependence of interband transitions in GaN grown by metalorganic chemical vapor deposition

T. J. Schmidt, Xing Yang, Sung‐Ho Hwang et al. · Applied Physics Letters · 1995 · 263 citations

Natural Sciences, Materials Science, Physics +17

Excitonic recombination in GaN grown by molecular beam epitaxy

M. Smith, G. D. Chen, J. Z. Li et al. · Applied Physics Letters · 1995 · 76 citations

Natural Sciences, Materials Engineering, Materials Science +17

Low-Temperature Luminescence of GaN

H. G. Grimmeiss, B. Ḿonemar · Journal of Applied Physics · 1970 · 68 citations

Engineering, Materials Engineering, Materials Science +14