Bipolar Charge-Plasma Transistor: A Novel Three Terminal Device

Abstract

A distinctive approach for forming a lateral bipolar charge-plasma transistor (BCPT) is explored using 2-D simulations. Different metal work-function electrodes are used to induce n- and p-type charge-plasma layers on undoped silicon-on-insulator (SOI) to form the emitter, base, and collector regions of a lateral n-p-n transistor. Electrical characteristics of the proposed device are simulated and compared with that of a conventionally doped lateral bipolar junction transistor (BJT) with identical dimensions. Our simulation results demonstrate that the BCPT concept will help us realize a superior bipolar transistor in terms of a high current gain, as compared with a conventional BJT. This BCPT concept is suitable in overcoming doping issues such as dopant activation and high-thermal budgets, which are serious issues in ultrathin SOI structures.