Investigation of radiative tunneling in GaN/InGaN single quantum well light-emitting diodes

Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes

Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Applied Physics Letters · 1994 · 3.8K citations

Engineering, Electrical Engineering, Materials Science +17

Gallium vacancies and the yellow luminescence in GaN

Jörg Neugebauer, Chris G. Van de Walle · Applied Physics Letters · 1996 · 1.1K citations

Natural Sciences, Materials Science, Physics +17

Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films

B. Heying, Xuemei Wu, S. Keller et al. · Applied Physics Letters · 1996 · 829 citations

Natural Sciences, Materials Engineering, Materials Science +17

Mechanism of Yellow Luminescence in GaN

T. Ogino, Masaharu Aoki · Japanese Journal of Applied Physics · 1980 · 684 citations

Engineering, Materials Engineering, Materials Science +17

Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

S. J. Rosner, Elizabeth C. Carr, M. J. Ludowise et al. · Applied Physics Letters · 1997 · 530 citations

Natural Sciences, Materials Engineering, Materials Science +17