Status and potential of AlInAs/GaInAs/InP HBT ICs

Abstract

The authors review the rapid development of AlInAs/GaInAs/InP IC technology in the US and describe some of the potential payoffs offered by this technology. It is pointed out that AlInAs/GaInAs/InP HBT (heterojunction bipolar transistor) ICs have made significant strides in a short time to demonstrate the feasibility and potential for high-performance ICs based on this technology. While record-setting IC speed has been the predominant measure of success, new benchmarks will probably emerge over the next couple years including device and IC reliability, lower IC power dissipation, higher levels of integration, and improved characteristics through double HBTs. These will enable the technology to establish its own niche within the overall and rapidly improving bipolar IC arena.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>