IEEE Transactions on Electron Devices · 2003 · 202 citations · 26 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ModelingDevice SimulationElectronic Transport ModelingField-effect TransistorsNanoelectronicsSemiconductor PhysicsChannel Length ScalingDual-gate Field-effect TransistorsNanoscale TransistorsScatteringScattering LengthSurface Scattering
We model the influence of scattering along the channel and extension regions of dual gate nanotransistors. It is found that the reduction in drain current due to scattering in the right half of the channel is comparable to the reduction in drain current due to scattering in the left half of the channel, when the channel length is comparable to the scattering length. This is in contrast to a popular belief that scattering in the source end of a nanotransistor is significantly more detrimental to the drive current than scattering elsewhere. As the channel length becomes much larger than the scattering length, scattering in the drain-end is less detrimental to the drive current than scattering near the source-end of the channel. Finally, we show that for nanotransistors, the classical picture of modeling the extension regions as simple series resistances is not valid.
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CMOS scaling into the nanometer regime
Yuan Taur, D. A. Buchanan, Wei Chen et al. · Proceedings of the IEEE · 1997 · 889 citations
Engineering, Computer Engineering, Electrical Engineering +17
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