1979 · 16 citations · 2 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesTransport PhenomenaDevice CharacterizationDevice ModelingDevice ReliabilityDevice ScalingDevice SimulationIntegrated Circuit DesignCompact Device ModelingDevice Scaling EffectsDevice VariabilityField-effect Transistor SimulationLeakage Current ModelingMetal-oxide-semiconductor Field-effect Transistor ModelingMosfet ModelingProcess Variation Analysis
Results of experimental measurements and 2D computer modeling for submicron MOSFET's are presented. Statistical measurements are shown for MOSFET's with masked channel lengths ranging from 10.2 to 1.3 microns. It is shown by means of two-dimensional device analysis that the observed statistics are a result of both the design parameters such as junction profiles and variations in L <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</inf> due to process control.
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