IEEE Transactions on Nuclear Science · 1989 · 37 citations · 18 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesDefect ModelingDefects In Electronic MaterialsDevice ReliabilityRadiation Damage In MaterialsRadiation HardeningSemiconductor ReliabilityAnnealingAnnealing EffectsAnnealing ProcessesAnnealing Time EffectsDefect Evolution Under IrradiationHardnessRadiation EffectsRadiation Hardness
A simple model for interpreting and extrapolating time-dependent effects in the irradiation of microelectronic devices is tested by fitting its predictions to published and previously unpublished experimental data. The goal is to evaluate the applicability of such a model to hardness assurance testing in cases where defect growth and annealing processes (time-dependent effects) are significant. Data are presented indicating hole annealing times varying by more than six orders of magnitude. The implications of the large variation in hole annealing times for hardness assurance testing are explored.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Physical Mechanisms Contributing to Device "Rebound"
J.R. Schwank, P.S. Winokur, P. J. McWhorter et al. · IEEE Transactions on Nuclear Science · 1984 · 360 citations