IEEE Electron Device Letters · 1990 · 56 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyCurrent-voltage CharacteristicsField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsThin-film TransistorsTransistor BiasingFin Field-effect TransistorsPolysiliconTurn-on Mechanisms
An improved polysilicon high-voltage thin-film transistor (HVTFT) structure for eliminating the current-pinching phenomenon often observed in the conventional offset-gate polysilicon HVTFTs is discussed. The device employs, in lieu of implantation, a metal field plate overlapping the entire offset region to control the conductivity of the offset region. By properly biasing the field plate to distribute the drain electric field at both ends, high-voltage operation of up to 100 V, suitable for many large-area applications, is achieved. Good turn-on characteristics without current pinching effects are consistently obtained. The structure also eliminates the lightly doped drain implant required in conventional offset-gate HVTFTs, resulting in a simpler and more reproducible process.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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High-voltage thin film transistors for large area microelectronics
Mike Hack, A. Chiang, T.Y. Huang et al. · 2003 · 12 citations