IEEE Transactions on Electron Devices · 2006 · 69 citations · 12 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCarrier TransportIii-v SemiconductorsSemiconductor HeterostructuresSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap SemiconductorsAmbient Temperature EffectsCarrier ConcentrationCarrier DynamicsCarrier Transport In SemiconductorsCarrier Transport MechanismsCarrier Transport ModelingCharge Carrier DensityTransport In Semiconductors
The temperature and carrier density dependence of electron intrinsic saturation velocity (v/sub si/) in a 0.3-/spl mu/m gate length AlGaN/GaN HEMT was extracted from multibias S-parameter measurements. It was found that v/sub si/ fell rapidly with increasing sheet carrier concentration (n/sub s/), but was only a very weak function of ambient temperature (T/sub amb/). This behavior is consistent with the hot-phonon model of carrier transport.
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Undoped AlGaN/GaN HEMTs for microwave power amplification
L.F. Eastman, V. Tilak, J. Smart et al. · IEEE Transactions on Electron Devices · 2001 · 389 citations
Electron drift velocity in AlGaN/GaN channel at high electric fields
L. Ardaravičius, A. Matulionis, J. Liberis et al. · Applied Physics Letters · 2003 · 116 citations