L. Ardaravičius - Concepedia

Author

L. Ardaravičius

Center for Physical Sciences and Technology ORCID

Also Known As

Ardaravičius, L., L Ardaravicius, L Ardaravičius, L. ARDARAVICIUS, L. ARDARAVIČIUS, L. Ardaravicius, L. Ardaravičius, Linas ARDARAVIČIUS, Linas Ardaravicius, Linas Ardaravičius

Publications

381

Citations

H-Index

Concepts

All Affiliations

Center for Physical Sciences and Technology Cornell University Philips (United States)Virginia Commonwealth University

About

L. Ardaravičius is an author at Center for Physical Sciences and Technology specializing in electrical engineering, applied physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	10	307
2	Applied Physics	10	10	307
3	Electrical Engineering	10	10	307
4	Physics	9	9	295
5	Condensed Matter Physics	5	5	98

L. Ardaravičius

Publications

327

Citations

H-Index

Page 1

	Year	Citations
Electron drift velocity in AlGaN/GaN channel at high electric fields L. Ardaravičius, A. Matulionis, J. Liberis, Applied Physics Letters Wide-bandgap SemiconductorElectron Drift VelocityElectrical EngineeringEngineeringPhysics	2003	115
Hot-electron energy relaxation time in AlGaN/GaN A. Matulionis, J. Liberis, L. Ardaravičius, Semiconductor Science and Technology Wide-bandgap SemiconductorElectrical EngineeringMicrowave Noise TechniqueEnergy Relaxation TimeEngineering	2002	44
Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields L. Ardaravičius, M. Ramonas, J. Liberis, Journal of Applied Physics SemiconductorsElectron Drift VelocityElectrical EngineeringElectronic DevicesEngineering	2009	35
Comparative analysis of hot‐electron transport in AlGaN/GaN and AlGaN/AlN/GaN 2DEG channels L. Ardaravičius, M. Ramonas, O. Kiprijanovič, physica status solidi (a) Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineeringPhysics	2005	23
Hot-electron-temperature relaxation time in a two-dimensional electron gas: AlGaN/GaN at 80 K A. Matulionis, R. Katilius, J. Liberis, Journal of Applied Physics Two-dimensional Electron GasWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics	2002	20
Threshold field for soft damage and electron drift velocity in InGaN two-dimensional channels L. Ardaravičius, O. Kiprijanovič, J. Liberis, Semiconductor Science and Technology Wide-bandgap SemiconductorEngineeringSemiconductorsElectronic DevicesElectronic Engineering	2015	16
Hot-electron transport in 4H–SiC L. Ardaravičius, A. Matulionis, O. Kiprijanovič, Applied Physics Letters EngineeringCharge TransportSemiconductor DeviceNegative Differential ConductanceSemiconductors	2005	15
Electron drift velocity in wurtzite ZnO at high electric fields: Experiment and simulation L. Ardaravičius, O. Kiprijanovič, M. Ramonas, Journal of Applied Physics EngineeringCharge TransportElectron OpticElectron PhysicNanoelectronics	2019	14
HOT-PHONON LIMITED ELECTRON ENERGY RELAXATION IN AlN/GaN A. Matulionis, J. Liberis, L. Ardaravičius, International Journal of High Speed Electronics and Systems Wide-bandgap SemiconductorElectrical EngineeringMicrowave Noise TechniqueEngineeringRf Semiconductor	2002	13
Window for better reliability of nitride heterostructure field effect transistors A. Matulionis, J. Liberis, E. Šermukšnis, Microelectronics Reliability Semiconductor TechnologyElectrical EngineeringEngineeringBias Temperature InstabilityApplied Physics	2012	12

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