Applied Physics Letters · 2003 · 116 citations · 15 references
EngineeringMaterials SciencePhysicsElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCurrent-voltage CharacteristicsDevice CharacterizationDevice SimulationElectron TransportSemiconductor PhysicsWide-bandgap SemiconductorsCarrier Drift VelocityCharge Carrier Drift VelocityElectron DensityElectron DriftJoule HeatingMonte Carlo Device SimulationPhononsVelocity Saturation
Current–voltage characteristics of a nominally undoped AlGaN/GaN two-dimensional electron gas channel is measured at a room temperature, and electron drift velocity is deduced under assumption of uniform electric field and field-independent electron density. No velocity saturation is reached at fields up to 130 kV/cm, when the effect of Joule heating is minimized through application of nanosecond pulses of voltage. The estimated drift velocity is near 2×107 cm/s at 130 kV/cm. Monte Carlo simulation of the drift velocity is carried out with and without effects of channel self-heating for a many-subband model, with hot phonons and electron gas degeneracy taken into account.
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GaN: Processing, defects, and devices
S. J. Pearton, J.C. Zolper, R. J. Shul et al. · Journal of Applied Physics · 1999 · 1.8K citations
Self-heating in high-power AlGaN-GaN HFETs
R. Gaška, A. Osinsky, J. Yang et al. · IEEE Electron Device Letters · 1998 · 298 citations