Electron drift velocity in AlGaN/GaN channel at high electric fields

L. Ardaravičius, A. Matulionis, J. Liberis, +5

Applied Physics Letters

Wide-bandgap SemiconductorElectron Drift VelocityElectrical EngineeringEngineeringPhysics +8

Hot-electron energy relaxation time in AlGaN/GaN

A. Matulionis, J. Liberis, L. Ardaravičius, +3

Semiconductor Science and Technology

Wide-bandgap SemiconductorElectrical EngineeringMicrowave Noise TechniqueEnergy Relaxation TimeEngineering +8

Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons

Jacob H. Leach, Congyong Zhu, M. Wu, +10

Applied Physics Letters

Wide-bandgap SemiconductorElectron DensityElectrical EngineeringEngineeringPhysics +9

Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG channels

A. Matulionis, J. Liberis, E. Šermukšnis, +4

Semiconductor Science and Technology

Wide-bandgap SemiconductorElectrical EngineeringMicrowave Noise TechniqueEngineeringRf Semiconductor +9

Ultrafast Removal of LO-Mode Heat From a GaN-Based Two-Dimensional Channel

A. Matulionis, J. Liberis, I. Matulionienė, +2

Proceedings of the IEEE

Wide-bandgap SemiconductorEngineeringOptoelectronic DevicesSemiconductorsElectronic Devices +15

Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields

L. Ardaravičius, M. Ramonas, J. Liberis, +6

Journal of Applied Physics

SemiconductorsElectron Drift VelocityElectrical EngineeringElectronic DevicesEngineering +13

Hot phonons in Si-doped GaN

J. Liberis, M. Ramonas, O. Kiprijanovič, +5

Applied Physics Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringRf Semiconductor +9

Experiments on hot electron noise in semiconductor materials for high-speed devices

V. Bareikis, J. Liberis, I. Matulionienė, +2

IEEE Transactions on Electron Devices

SemiconductorsSemiconductor TechnologyElectrical EngineeringCategoryquantum ElectronicsEngineering +13

Nitride-based high electron mobility transistors with a GaN spacer

Tomás Palacios, L. Shen, S. Keller, +7

Applied Physics Letters

Wide-bandgap SemiconductorElectrical EngineeringEngineeringRf SemiconductorPhysics +10

Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels

A. Matulionis, J. Liberis, I. Matulionienė, +7

Applied Physics Letters

Wide-bandgap SemiconductorAluminium NitrideEngineeringPlasmon-enhanced Heat DissipationSemiconductors +16