M. Wu

Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

Xianbo LI, X. Ni, Joon Chok Lee et al. · Applied Physics Letters · 2009 · 58 citations

Engineering, Optoelectronic Devices, Reference C-plane Leds +18

Electron mobility in InGaN channel heterostructure field effect transistor structures with different barriers

Jun Xie, Jacob H. Leach, X. Ni et al. · Applied Physics Letters · 2007 · 45 citations

Semiconductors, Different Barriers, Electrical Engineering +15

Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons

Jacob H. Leach, Congyong Zhu, M. Wu et al. · Applied Physics Letters · 2009 · 44 citations

Wide-bandgap Semiconductor, Electron Density, Electrical Engineering +11

Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG channels

A. Matulionis, J. Liberis, E. Šermukšnis et al. · Semiconductor Science and Technology · 2008 · 39 citations

Wide-bandgap Semiconductor, Electrical Engineering, Microwave Noise Technique +11

Nonpolar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition

X. Ni, M. Wu, J. Lee et al. · Applied Physics Letters · 2009 · 39 citations

Materials Science, Semiconductors, Electrical Engineering +15