E. Šermukšnis

Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons

Jacob H. Leach, Congyong Zhu, M. Wu et al. · Applied Physics Letters · 2009 · 44 citations

Wide-bandgap Semiconductor, Electron Density, Electrical Engineering +11

Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG channels

A. Matulionis, J. Liberis, E. Šermukšnis et al. · Semiconductor Science and Technology · 2008 · 39 citations

Wide-bandgap Semiconductor, Electrical Engineering, Microwave Noise Technique +11

Ultrafast Removal of LO-Mode Heat From a GaN-Based Two-Dimensional Channel

A. Matulionis, J. Liberis, I. Matulionienė et al. · Proceedings of the IEEE · 2009 · 36 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +17

Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels

A. Matulionis, J. Liberis, I. Matulionienė et al. · Applied Physics Letters · 2009 · 31 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Engineering +18

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Jacob H. Leach, Congyong Zhu, M. Wu et al. · Applied Physics Letters · 2010 · 29 citations

Semiconductors, Intrinsic Transit Time, Electrical Engineering +15