Congyong Zhu

Deep level defects in a nitrogen-implanted ZnO homogeneous p-n junction

Qilin Gu, C. C. Ling, G. Bräuer et al. · Applied Physics Letters · 2008 · 45 citations

Natural Sciences, Materials Science, Physics +12

Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons

Jacob H. Leach, Congyong Zhu, M. Wu et al. · Applied Physics Letters · 2009 · 44 citations

Engineering, Electrical Engineering, Materials Science +17

Arsenic doped p-type zinc oxide films grown by radio frequency magnetron sputtering

Jincheng Fan, Congyong Zhu, S. Fung et al. · Journal of Applied Physics · 2009 · 39 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +16

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Jacob H. Leach, Congyong Zhu, M. Wu et al. · Applied Physics Letters · 2010 · 29 citations

Engineering, Electrical Engineering, Materials Science +17

Field-assisted emission in AlGaN/GaN heterostructure field-effect transistors using low-frequency noise technique

Cemil Kayis, Congyong Zhu, Mo Wu et al. · Journal of Applied Physics · 2011 · 22 citations

Engineering, Electrical Engineering, Materials Engineering +17