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Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels
31
Citations
24
References
2009
Year
Wide-bandgap SemiconductorAluminium NitrideEngineeringPlasmon-enhanced Heat DissipationSemiconductorsOptical PropertiesNanoelectronicsQuantum MaterialsLo-phonon LifetimePhysicsAluminum Gallium NitrideHeat TransferCategoryiii-v SemiconductorRoom TemperatureApplied PhysicsCondensed Matter PhysicsPlasmon–lo-phonon ResonancePhononGan Power DeviceThermal EngineeringOptoelectronics
Decay of nonequilibrium longitudinal optical (LO) phonons is investigated at room temperature in two-dimensional electron gas channels confined in nearly lattice-matched InAlN/AlN/GaN structures. A nonmonotonous dependence of the LO-phonon lifetime on the supplied electric power is reported for the first time and explained in terms of plasmon–LO-phonon resonance tuned by applied bias at a fixed sheet density (8×1012 cm−2). The shortest lifetime of 30±15 fs is found at the power of 20±10 nW/electron.
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