D.G. Hayes

85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications

Suman Datta, T. Ashley, J.K. Brask et al. · 2006 · 127 citations

Engineering, Computer Engineering, Electrical Engineering +15

Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications

T. Ashley, L. Buckle, Suman Datta et al. · Electronics Letters · 2007 · 125 citations

Engineering, Electrical Engineering, Materials Science +17

High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications

M. Radosavljević, T. Ashley, A. D. Andreev et al. · 2008 · 100 citations

Engineering, Electrical Engineering, Materials Science +15

Analysis of DC–RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

Chris Roff, J. Benedikt, P.J. Tasker et al. · IEEE Transactions on Electron Devices · 2008 · 91 citations · Full text

Engineering, Electrical Engineering, Materials Science +16

Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields

M. S. Skolnick, D.G. Hayes, P.E. Simmonds et al. · Physical review. B, Condensed matter · 1990 · 81 citations · Full text

Natural Sciences, Physics, Condensed Matter Physics +16