Electronics Letters · 2007 · 125 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsIntegrated Circuit DesignIntegrated Circuit DevicesNanoelectronicsQuantum WellsSemiconductor Device MaterialsSemiconductor PhysicsDigital Logic CircuitsHeterogeneous Device IntegrationHeterogeneous IntegrationLow-power Logic DesignQuantum Well HeterostructuresQuantum Well StructuresSiliconSilicon-on-insulator Technology
The heterogeneous integration of InSb quantum well transistors onto silicon substrates is investigated for the first time. 85 nm gate length FETs with fT=305 GHz at Vds=0.5 V and DC performance suitable for digital logic are demonstrated on material with a buffer just 1.8 µm thick. An initial step towards integrating InSb FETs with mainstream Si CMOS for high-speed, energy-efficient logic applications has been achieved.
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