Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications

Abstract

The heterogeneous integration of InSb quantum well transistors onto silicon substrates is investigated for the first time. 85 nm gate length FETs with fT=305 GHz at Vds=0.5 V and DC performance suitable for digital logic are demonstrated on material with a buffer just 1.8 µm thick. An initial step towards integrating InSb FETs with mainstream Si CMOS for high-speed, energy-efficient logic applications has been achieved.