D. J. Wallis

The 2018 GaN power electronics roadmap

Hiroshi Amano, Yannick Baines, Edward Beam et al. · Journal of Physics D Applied Physics · 2018 · 1.2K citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +15

Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

Andrei Sarua, Hangfeng Ji, K.P. Hilton et al. · IEEE Transactions on Electron Devices · 2007 · 287 citations

Wide-bandgap Semiconductor, Electrical Engineering, High Temperature Materials +12

Dissolution of different forms of partially porous silicon wafers under simulated physiological conditions

Simon H. Anderson, H. Elliott, D. J. Wallis et al. · physica status solidi (a) · 2003 · 240 citations

Engineering, Nanoporous Material, Simulated Physiological Conditions +17

Medium-Range Order in Silica, the Canonical Network Glass

P. H. Gaskell, D. J. Wallis · Physical Review Letters · 1996 · 189 citations

Materials Science, Diffraction Peak, Engineering +13

Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy

Martin Kuball, G.J. Riedel, James W. Pomeroy et al. · IEEE Electron Device Letters · 2007 · 138 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +15