D. J. Wallis - Concepedia

Author

D. J. Wallis

Also Known As

, Wallis, D J Wallis, D Wallis, D. J. WALLIS, D. J. Wallis, D. Wallis, D.J Wallis, D.J. Wallis, D. J. WALLIS, David J. Wallis

220

Publications

5.4K

Citations

H-Index

105

Concepts

All Affiliations

University of Cambridge Qinetiq (United Kingdom)Cardiff University University of Sheffield University of Manchester

About

D. J. Wallis is an author at University of Cambridge specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	31	76	4.5K
2	Applied Physics	30	71	4.2K
3	Biomedical Engineering	4	4	290
4	Health Sciences	1	1	31
5	Natural Sciences	1	1	18

D. J. Wallis

Publications

4.8K

Citations

H-Index

Page 1

	Year	Citations
The 2018 GaN power electronics roadmap Hiroshi Amano, Yannick Baines, Edward Beam, Journal of Physics D Applied Physics Wide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronicsApplied Physics	2018	1.2K
Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices Andrei Sarua, Hangfeng Ji, K.P. Hilton, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorElectrical EngineeringHigh Temperature MaterialsEngineeringDetermined Effective Tbr	2007	287
Dissolution of different forms of partially porous silicon wafers under simulated physiological conditions Simon H. Anderson, H. Elliott, D. J. Wallis, physica status solidi (a) EngineeringNanoporous MaterialSimulated Physiological ConditionsBiomedical EngineeringPorous Si Films	2003	240
Medium-Range Order in Silica, the Canonical Network Glass P. H. Gaskell, D. J. Wallis Physical Review Letters Materials ScienceDiffraction PeakEngineeringPhysicsPrototypical Network Glass	1996	189
Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy Martin Kuball, G.J. Riedel, James W. Pomeroy, IEEE Electron Device Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringPhysicsSubmicrometer Spatial Resolution	2007	138
85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications Suman Datta, T. Ashley, J.K. Brask, Ultra High SpeedElectrical EngineeringDepletion Mode InsbHigh-speed ElectronicsEngineering	2006	127
Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications T. Ashley, L. Buckle, Suman Datta, Electronics Letters Insb QuantumUltra-high SpeedElectrical EngineeringElectronic DevicesEngineering	2007	125
An Organic Down‐Converting Material for White‐Light Emission from Hybrid LEDs Neil J. Findlay, Jochen Bruckbauer, Anto R. Inigo, Advanced Materials EngineeringOrganic ElectronicsOrganic ChemistryChemistryLuminescence Property	2014	122
High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications M. Radosavljević, T. Ashley, A. D. Andreev, Semiconductor TechnologyElectrical EngineeringLogic ApplicationsEngineeringSemiconductor Device	2008	99
Analysis of DC–RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering Chris Roff, J. Benedikt, P.J. Tasker, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorLocalized NatureElectrical EngineeringRf WaveformEngineering	2008	91

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