M. T. Emeny

85nm gate length enhancement and depletion mode InSb quantum well transistors for ultra high speed and very low power digital logic applications

Suman Datta, T. Ashley, J.K. Brask et al. · 2006 · 127 citations

Ultra High Speed, Electrical Engineering, Depletion Mode Insb +13

Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications

T. Ashley, L. Buckle, Suman Datta et al. · Electronics Letters · 2007 · 125 citations

Insb Quantum, Ultra-high Speed, Electrical Engineering +15

High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications

M. Radosavljević, T. Ashley, A. D. Andreev et al. · 2008 · 99 citations

Semiconductor Technology, Electrical Engineering, Logic Applications +11

Electronic transport in modulation-doped InSb quantum well heterostructures

Julie Orr, A. M. Gilbertson, M. Fearn et al. · Physical Review B · 2008 · 69 citations · Full text

Wide-bandgap Semiconductor, Quantum Science, Room Temperature Mobilities +13

Novel insb-based quantum well transistors for ultra-high speed, low power logic applications

T. Ashley, A.R. Barnes, L. Buckle et al. · 2005 · 62 citations

Insb Quantum, Ultra-high Speed, Electrical Engineering +9