M. Fearn

Bond-order potentials: Theory and implementation

A. P. Horsfield, A. M. Bratkovsky, M. Fearn et al. · Physical review. B, Condensed matter · 1996 · 217 citations

Natural Sciences, Materials Science, Physics +14

High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications

M. Radosavljević, T. Ashley, A. D. Andreev et al. · 2008 · 100 citations

Engineering, Electrical Engineering, Materials Science +15

Electronic transport in modulation-doped InSb quantum well heterostructures

Julie Orr, A. M. Gilbertson, M. Fearn et al. · Physical Review B · 2008 · 69 citations · Full text

Engineering, Materials Science, Physics +17

Cyclopentadithiophene based polymers—a comparison of optical, electrochemical and organic field-effect transistor characteristics

Masaki Horie, Leszek A. Majewski, M. Fearn et al. · Journal of Materials Chemistry · 2010 · 67 citations

Natural Sciences, Chemistry, Materials Science +17

Novel insb-based quantum well transistors for ultra-high speed, low power logic applications

T. Ashley, A.R. Barnes, L. Buckle et al. · 2005 · 62 citations

Engineering, Electrical Engineering, Materials Science +17