IEEE Journal of Solid-State Circuits · 2003 · 50 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave Integrated CircuitsMicrowave OscillatorsMicrowave Semiconductor DevicesWide Band Gap SemiconductorsWide-bandgap SemiconductorsGan OscillatorsHigh-electron-mobility TransistorsLow-frequency NoiseMicrowave DevicesMonolithic Microwave Integrated CircuitsNegative Resistance OscillatorsPhase NoiseTransmission Line Resonators
A monolithic X-band oscillator based on an AlGaN/GaN high electron mobility transistor (HEMT) has been designed, fabricated, and characterized. A common-gate HEMT with 1.5 mm of gate width in conjunction with inductive feedback is used to generate negative resistance. A high Q resonator is implemented with a short-circuit low-loss coplanar waveguide transmission line. The oscillator delivers 1.7 W at 9.556 GHz into 50-/spl Omega/ load when biased at V/sub ds/=30 V and V/sub gs/=-5 V, with dc-to-RF efficiency of 16%. Phase noise was estimated to be -87 dBc/Hz at 100-kHz offset. Low-frequency noise, pushing and pulling figures, and time-domain characterization have been performed. Experimental results show great promise for AlGaN/GaN HEMT MMIC technology to be used in future high-power microwave source applications.
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Experimental studies on 1/f noise
F.N. Hooge, T.G.M. Kleinpenning, L.K.J. Vandamme · Reports on Progress in Physics · 1981 · 1.1K citations
Undoped AlGaN/GaN HEMTs for microwave power amplification
L.F. Eastman, V. Tilak, J. Smart et al. · IEEE Transactions on Electron Devices · 2001 · 389 citations