Concepedia

Gan Oscillators

GaN Oscillators is a type of microwave oscillator that utilizes gallium nitride (GaN) semiconductor technology to achieve high power density, efficiency, and frequency stability in radio frequency and microwave signal generation.

74

Publications

2.4K

Citations

345

Authors

92

Institutions

Publications per year

2017–2026

15

Variants

Gallium Nitride Oscillators

Parents

Publications

74

High-Q GaN nanowire resonators and oscillators

S. M. Tanner, Jason M. Gray, Charles T. Rogers et al. · Applied Physics Letters · 2007 · 134 citations

, , +17

GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

Lei Li, Kazuki Nomoto, Ming Pan et al. · IEEE Electron Device Letters · 2020 · 123 citations

, , +17

Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform

Gaofei Tang, Alex Man Ho Kwan, Jiacheng Lei et al. · IEEE Electron Device Letters · 2017 · 117 citations

, , +17

Large-signal microwave performance of GaN-based NDR diode oscillators

E. Alekseev, Dimitris Pavlidis · Solid-State Electronics · 2000 · 115 citations

, , +14

Phonon-Electron Interactions in Piezoelectric Semiconductor Bulk Acoustic Wave Resonators

Vikrant J. Gokhale, Mina Rais‐Zadeh · Scientific Reports · 2014 · 82 citations · Full text

, , +17

1–5 of 74

Authors

345

  1. DK
    Dan Kuylenstierna

    Chalmers University of Technology, Sweden

    5 publications · 96 citations

    5

    h-index

  2. MH
    Mikael Hörberg

    Chalmers University of Technology, Sweden

    5 publications · 96 citations

    5

    h-index

  3. HZ
    Herbert Zirath

    Chalmers University of Technology, Sweden

    4 publications · 84 citations

    4

    h-index

  4. DČ
    D. Čiplys

    Rensselaer Polytechnic Institute, United States

    4 publications · 138 citations

    4

    h-index

  5. MS
    M. S. Shur

    Rensselaer Polytechnic Institute, United States

    4 publications · 138 citations

    4

    h-index

1–5 of 345

Institutions

92

  1. University of Michigan

    Ann Arbor, United States

    8 h-index

    22 publications

    990 citations

  2. Chalmers University of Technology

    Gothenburg, Sweden

    5 h-index

    27 publications

    559 citations

  3. Vilnius University

    Vilnius, Lithuania

    4 h-index

    6 publications

    158 citations

  4. Rensselaer Polytechnic Institute

    Troy, United States

    4 h-index

    13 publications

    522 citations

  5. Hong Kong University of Science and Technology

    Hong Kong, Hong Kong

    4 h-index

    19 publications

    871 citations

  6. University of California, Santa Barbara

    Santa Barbara, United States

    3 h-index

    14 publications

    276 citations

  7. Centre National de la Recherche Scientifique

    Paris, France

    3 h-index

    14 publications

    497 citations

  8. Ericsson (Sweden)

    Kista, Sweden

    3 h-index

    6 publications

    118 citations

1–8 of 92

Venues

  1. IEEE Microwave and Wireless Components Letters

    9 publications · 219 citations

    9

    h-index

  2. IEEE Electron Device Letters

    6 publications · 392 citations

    6

    h-index

  3. Applied Physics Letters

    6 publications · 335 citations

    6

    h-index

  4. Electronics Letters

    6 publications · 180 citations

    6

    h-index

  5. 3

    h-index

1–5