Jiacheng Lei

Digital Integrated Circuits on an E-Mode GaN Power HEMT Platform

Gaofei Tang, Alex Man Ho Kwan, King‐Yuen Wong et al. · IEEE Electron Device Letters · 2017 · 112 citations

Electrical Engineering, Engineering, Electronic Engineering +12

Integration of LPCVD-SiN<inf>x</inf> gate dielectric with recessed-gate E-mode GaN MIS-FETs: Toward high performance, high stability and long TDDB lifetime

Mengyuan Hua, Zhaofu Zhang, Jin Wei et al. · 2016 · 109 citations

Wide-bandgap Semiconductor, Interface Protection Technique, Electrical Engineering +10

650-V Double-Channel Lateral Schottky Barrier Diode With Dual-Recess Gated Anode

Jiacheng Lei, Jin Wei, Gaofei Tang et al. · IEEE Electron Device Letters · 2017 · 82 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

High-speed, high-reliability GaN power device with integrated gate driver

Gaofei Tang, M.-H. Kwan, Zhaofu Zhang et al. · 2018 · 77 citations

Electrical Engineering, Engineering, Power Device +9

2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current

Qingkai Qian, Jiacheng Lei, Jin Wei et al. · npj 2D Materials and Applications · 2019 · 48 citations · Full text

Wide-bandgap Semiconductor, Engineering, Field-effect Transistors +16