Effect of temperature on the transfer characteristic of a 0.5 μm-gate Si:SiGe depletion-mode n-MODFET

Low temperature analysis of 0.25 μm T-gate strained Si/Si/sub 0.55/Ge/sub 0.45/ n-MODFET's

F. Aniel, N. Zerounian, R. Adde et al. · IEEE Transactions on Electron Devices · 2000 · 34 citations

Engineering, Electrical Engineering, Microelectronics +16

Si/SiGe modulation doped field-effect transistor with two electron channels

U. König, F. Schäffler · Electronics Letters · 1991 · 31 citations

Engineering, Electrical Engineering, Materials Science +15

Microscopic analysis of the influence of strain and band-gap offsets on noise characteristics in Si1−xGex/Si heterojunctions

M. J. Martı́n Martinez, D. Pardo, J.E. Velázquez-Pérez · Journal of Applied Physics · 1998 · 14 citations

Engineering, Electrical Engineering, Materials Science +17

Characterization and Modeling of Silicon CMOS Transistor Operation at Low Temperature

G. Ghibaudo, F. Balestra · Journal de Physique IV (Proceedings) · 1996 · 14 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +12

Transconductance enhancement at low temperaturesin deep submicrometre MOSFETs

Bertrand Szelag, F. Balestra · Electronics Letters · 1998 · 11 citations

Engineering, Electrical Engineering, Materials Science +14