Concepedia

Ion-implantation induced anomalous surface amorphization in silicon

T. Lohner, E. Kótai, N.Q. Khánh, Zsolt Tóth, M. Fried, K. Vedam, N. V. Nguyen, L.J. Hanekamp, A. van Silfhout

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1994 · 37 citations · 14 references

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References

14

Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous Silicon

J. S. Williams, R. G. Elliman, W. L. Brown et al. · Physical Review Letters · 1985 · 210 citations

, , +17

Ion-beam-induced epitaxial crystallization and amorphization in silicon

F. Priolo, E. Rimini · Materials Science Reports · 1990 · 197 citations

, , +12

Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy deposition

Jan Linnros, G. Holmén, B. G. Svensson · Physical review. B, Condensed matter · 1985 · 123 citations

, , +15

Spectroscopic ellipsometry: A new tool for nondestructive depth profiling and characterization of interfaces

P. J. McMarr, K. Vedam, J. Narayan · Journal of Applied Physics · 1986 · 113 citations

, , +17

Mechanism of low-temperature (≤300 °C) crystallization and amorphization for the amorphous Si layer on the crystalline Si substrate by high-energy heavy-ion beam irradiation

Jyoji Nakata · Physical review. B, Condensed matter · 1991 · 107 citations

, , +17