T. Lohner

Determination of complex dielectric functions of ion implanted and implanted-annealed amorphous silicon by spectroscopic ellipsometry

M. Fried, T. Lohner, W.A.M. Aarnink et al. · Journal of Applied Physics · 1992 · 105 citations

Optical Materials, Point Defects, Engineering +23

Comparative study of surface roughness measured on polysilicon using spectroscopic ellipsometry and atomic force microscopy

P. Petrík, László Péter Biró, M. Fried et al. · Thin Solid Films · 1998 · 98 citations

Materials Science, Atomic Force Microscopy, Surface Characterization +9

Porous silicon formation by stain etching

É. Vázsonyi, E. Szilágyi, P. Petrík et al. · Thin Solid Films · 2001 · 96 citations

Materials Engineering, Materials Science, Engineering +7

Nondestructive determination of damage depth profiles in ion-implanted semiconductors by spectroscopic ellipsometry using different optical models

M. Fried, T. Lohner, W.A.M. Aarnink et al. · Journal of Applied Physics · 1992 · 86 citations

Optical Materials, Engineering, Optical Testing +19

Nondestructive determination of damage depth profiles in ion-implanted semiconductors by multiple-angle-of-incidence single-wavelength ellipsometry using different optical models

M. Fried, T. Lohner, E. Jároli et al. · Journal of Applied Physics · 1992 · 64 citations

Optical Materials, Engineering, Electron-beam Lithography +20