E. Jároli

Nondestructive determination of damage depth profiles in ion-implanted semiconductors by multiple-angle-of-incidence single-wavelength ellipsometry using different optical models

M. Fried, T. Lohner, E. Jároli et al. · Journal of Applied Physics · 1992 · 64 citations

Optical Materials, Engineering, Electron-beam Lithography +20

Thickness-dependent formation of Gd-silicide compounds

György Molnár, I. Geröcs, G. Pető et al. · Journal of Applied Physics · 1988 · 34 citations

Materials Engineering, Materials Science, Heat Treatment +13

Investigation of ion-implanted semiconductors by ellipsometry and backscattering spectrometry

M. Fried, T. Lohner, E. Jároli et al. · Thin Solid Films · 1984 · 27 citations

Semiconductors, Ion-implanted Semiconductors, Ion Implantation +3

Pyramidal pit formation at the Au/GaAs interface during heat treatment

B. Pécz, E. Jároli, G. Radnóczi et al. · physica status solidi (a) · 1986 · 22 citations

Materials Science, Materials Engineering, Engineering +11

Epitaxy of orthorhombic gadolinium disilicide on 〈100〉 silicon

I. Geröcs, György Molnár, E. Jároli et al. · Applied Physics Letters · 1987 · 20 citations

Materials Engineering, Semiconductors, Materials Science +11