Porous silicon formation by stain etching

Formation Mechanism and Properties of Electrochemically Etched Trenches in n‐Type Silicon

V. Lehmann, H. Föll · Journal of The Electrochemical Society · 1990 · 798 citations

Engineering, Electrical Engineering, Materials Science +17

Computer methods for analysis and simulation of RBS and ERDA spectra

E. Kótai · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1994 · 335 citations

Natural Sciences, Chemistry, Spectroscopic Analysis +12

Optical functions of chemical vapor deposited thin-film silicon determined by spectroscopic ellipsometry

G. E. Jellison, M. F. Chisholm, S. M. Gorbatkin · Applied Physics Letters · 1993 · 247 citations

Natural Sciences, Materials Engineering, Materials Science +17

On the Mechanism of Chemically Etching Germanium and Silicon

Dennis R. Turner · Journal of The Electrochemical Society · 1960 · 242 citations

Engineering, Chemistry, Materials Science +16

Photoluminescence and formation mechanism of chemically etched silicon

S. Shih, Keun‐Hwa Jung, T. Y. Hsieh et al. · Applied Physics Letters · 1992 · 129 citations

Engineering, Materials Engineering, Materials Science +14