H. Föll

Formation Mechanism and Properties of Electrochemically Etched Trenches in n‐Type Silicon

V. Lehmann, H. Föll · Journal of The Electrochemical Society · 1990 · 798 citations

Engineering, Trench Formation, N‐type Silicon +18

Formation and application of porous silicon

H. Föll, M. Christophersen, Jürgen Carstensen et al. · Materials Science and Engineering R Reports · 2002 · 765 citations

Materials Science, Materials Engineering, Engineering +5

Pores in III–V Semiconductors

H. Föll, S. Langa, Jürgen Carstensen et al. · Advanced Materials · 2003 · 232 citations · Full text

Semiconductors, Materials Science, Semiconductor Technology +12

Formation and nature of swirl defects in silicon

H. Föll, Bernd O. Kolbesen · Applied Physics A · 1975 · 165 citations

Engineering, Physics, Swirl Defects +5

Transmission electron microscopy of the formation of nickel silicides

H. Föll, P Shing Ho, K. N. Tu · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1982 · 136 citations

Materials Science, Oxide Heterostructures, Epitaxial Growth +15