Japanese Journal of Applied Physics · 1997 · 25 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsChemical Vapor DepositionP-n JunctionsSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor Thin FilmsCurrent GainDouble Heterostructure DevicesDouble HeterostructuresGain EnhancementHeterostructure TransistorsMetalorganic Chemical Vapor DepositionOffset VoltageSurface Recombination
An improved In 0.5 Ga 0.5 P/GaAs double heterostructure-emitter bipolar transistor (DHEBT) has been fabricated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The 100 Å undoped GaAs spacers grown on both sides of the base are used to improve the recombination of p-n interface and to increase the common-emitter current gain. The emitter edge-thinning technique is used to reduce the surface recombination current and improve the current gain. A current gain of 180 with an offset voltage as low as 60 mV are achieved. Meanwhile, Gummel plot is shown to understand the composition of collector and base currents.
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Takashi Kobayashi, K. Taira, Fumihiko Nakamura et al. · Journal of Applied Physics · 1989 · 166 citations