H. L. Evans

Negative capacitance at metal-semiconductor interfaces

Xi Wu, E.S. Yang, H. L. Evans · Journal of Applied Physics · 1990 · 169 citations

Device Modeling, Semiconductors, Electrical Engineering +12

Electronic states at silicide-silicon interfaces

Paul S. Ho, E.S. Yang, H. L. Evans et al. · Physical Review Letters · 1986 · 109 citations

Engineering, Physics, Nanoelectronics +12

Observation and electronic characterization of ‘‘new’’ <i>E</i>′ center defects in technologically relevant thermal SiO2 on Si: An additional complexity in oxide charge trapping

John F. Conley, Patrick M. Lenahan, H. L. Evans et al. · Journal of Applied Physics · 1994 · 90 citations

Engineering, Electronic Characterization, Silicon On Insulator +20

A heterojunction bipolar transistor with separate carrier injection and confinement

L. F. Luo, H. L. Evans, E.S. Yang · IEEE Transactions on Electron Devices · 1989 · 53 citations

Semiconductors, Electron Injection Efficiency, Electrical Engineering +12

Effect of Schottky barrier height on EL2 measurement by deep-level transient spectroscopy

Q. Y., Michael Schmidt, Xu Wu et al. · Journal of Applied Physics · 1988 · 25 citations

Wide-bandgap Semiconductor, Engineering, Atomic Emission Spectroscopy +18