Reliability considerations in scaled SONOS nonvolatile memory devices

A Floating Gate and Its Application to Memory Devices

D. Kahng, Simon M. Sze · Bell System Technical Journal · 1967 · 444 citations

Engineering, Computer Engineering, Electrical Engineering +13

Reduction of hot electron degradation in metal oxide semiconductor transistors by deuterium processing

Joseph W. Lyding, K. Hess, I.C. Kizilyalli · Applied Physics Letters · 1996 · 363 citations

Engineering, Materials Engineering, Materials Science +16

Charge accumulation and mobility in thin dielectric MOS transistors

C.G. Sodini, T.W. Ekstedt, J.L. Moll · Solid-State Electronics · 1982 · 315 citations

Engineering, Electrical Engineering, Materials Science +14

Characterization of thin-oxide MNOS memory transistors

M.H. White, J.R. Cricchi · IEEE Transactions on Electron Devices · 1972 · 199 citations

Engineering, Electrical Engineering, Materials Science +17

Investigation of the MOST channel conductance in weak inversion

J.J.M. Koomen · Solid-State Electronics · 1973 · 174 citations · Full text

Natural Sciences, Electrical Engineering, Physics +4