Heteroepitaxy of InGaAs on GaAs substrate with InAlAs intermediate layer

Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates

J. W. Lee, H. Shichijo, Hai-Lung Tsai et al. · Applied Physics Letters · 1987 · 225 citations

Engineering, Materials Engineering, Materials Science +17

Technique used in Hall effect analysis of ion implanted Si and Ge

Nils Gunnar Johansson, J. W. Mayer, O. J. Marsh · Solid-State Electronics · 1970 · 81 citations

Engineering, Materials Engineering, Materials Science +9

Improvements in the heteroepitaxy of GaAs on Si

R. M. Lum, J. K. Klingert, B. A. Davidson et al. · Applied Physics Letters · 1987 · 59 citations

Engineering, Materials Engineering, Materials Science +17

MOCVD growth and characterization of GaP on Si

J. M. Olson, M. M. Al‐Jassim, A. Kibbler et al. · Journal of Crystal Growth · 1986 · 58 citations

Engineering, Materials Engineering, Materials Science +12

Formation of the interface between GaAs and Si: Implications for GaAs-on-Si heteroepitaxy

R. D. Bringans, Marjorie A. Olmstead, R. I. G. Uhrberg et al. · Applied Physics Letters · 1987 · 51 citations

Engineering, Materials Engineering, Materials Science +17