MOCVD growth and characterization of GaP on Si

Growth of GaAs on Si by MOVCD

Masahiro Akiyama, Yoshihiro Kawarada, Katsuzo Kaminishi · Journal of Crystal Growth · 1984 · 199 citations

Engineering, Materials Engineering, Materials Science +10

Molecular beam epitaxial growth of GaP on Si

Steven L. Wright, H. Kroemer, Masanori Inada · Journal of Applied Physics · 1984 · 134 citations

Engineering, Materials Engineering, Materials Science +17

Electrical and optical properties of GaP grown on Si by MOVPE

Lars Samuelson, P. Omling, H. G. Grimmeiss · Journal of Crystal Growth · 1984 · 28 citations

Engineering, Materials Engineering, Materials Science +14

The heteroepitaxial growth of GaP films on Si substrates

H.B. Pogge, B.M. Kemlage, R.W. Broadie · Journal of Crystal Growth · 1977 · 27 citations

Natural Sciences, Materials Engineering, Materials Science +16

Heteroepitaxial Growth of GaP on Silicon by Molecular Beam Epitaxy

Shun‐ichi Gonda, Yuichi Matsushima, Seiji Mukai et al. · Japanese Journal of Applied Physics · 1978 · 27 citations

Engineering, Materials Engineering, Materials Science +16