Electrical and optical properties of GaP grown on Si by MOVPE

Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

D. V. Lang · Journal of Applied Physics · 1974 · 3.7K citations

Engineering, Electrical Engineering, Materials Science +16

Theory of a Wide-Gap Emitter for Transistors

H. Kroemer · Proceedings of the IRE · 1957 · 457 citations

Engineering, Electrical Engineering, Microelectronics +13

Electrical and optical properties of deep levels in MOVPE grown GaAs

Lars Samuelson, P.Omling'H. Titze, H. G. Grimmeiss · Journal of Crystal Growth · 1981 · 95 citations

Engineering, Materials Science, Physics +16

Heteroepitaxial growth of GaP on silicon

J. P. André, J. Hallais, C. Schiller · Journal of Crystal Growth · 1975 · 45 citations

Engineering, Materials Engineering, Materials Science +12

Heteroepitaxial growth of gallium phosphide on silicon

Takashi Katoda, M. Kishi · Journal of Electronic Materials · 1980 · 37 citations

Engineering, Materials Engineering, Materials Science +13