Applied Physics Letters · 1982 · 25 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDopingSemiconductor PhysicsSemiconductor Thin FilmsThin-film TransistorsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesCapacitance-voltage CharacteristicsCapacitance-voltage CharacterizationCurrent ControlHysteresis In Capacitance-voltage CurvesMolecular Beam EpitaxySchottky Barrier CharacteristicsSchottky Barrier DiodesSchottky Barriers
A quasi-Schottky barrier diode made on n-Ga0.47In0.53 As has been demonstrated. This device utilizes a fully depleted ultrathin p+-Ga0.47In0.53 As layer grown by molecular beam epitaxy to increase the barrier height. An increase in the barrier height of 0.27 V, making the total barrier height 0.47 V, has been obtained. A low reverse leakage current and a hysteresis-free capacitance-voltage characteristic suggest that this structure should be useful as a current control gate for high speed field-effect transistors.
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