IEEE Electron Device Letters · 1989 · 83 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceHeat TransferSemiconductor DevicesSurface EngineeringComplementary Metal-oxide-semiconductor TechnologyDevice ReliabilityOxidation ResistanceSemiconductor ReliabilityThermal ManagementThermal Properties Of SemiconductorsHot Carrier EffectsHot-carrier DegradationRapid Thermal OxidationReoxidation ProcessesSubthreshold SwingSubthreshold Swing DegradationThreshold VoltageTransconductance
The fabrication of 0.8- mu m MOSFETs using 7.7-nm-thick nitrided oxides reoxidized by rapid thermal processing at 900-1150 degrees C for 15-200 s is described. The hot-carrier-induced degradation was studied in terms of subthreshold swing, threshold voltage V/sub T/, and transconductance g/sub m/ voltage characteristics. Results indicate that rapid reoxidation markedly improves hot-carrier immunity; lifetimes reaching 30-mV V/sub T/ shift and 10 percent g/sub m/ degradation are improved by 3 and 1.5 orders of magnitude compared with those for thermal oxides, respectively. A degradation characteristic inherent to the (reoxidized) nitrided-oxide system is found, based on the gate-voltage dependence of g/sub m/ degradation.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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