Time dependent preferential sputtering in the HfO2 layer on Si(100)

Electrical and spectroscopic comparison of HfO2/Si interfaces on nitrided and un-nitrided Si(100)

P. D. Kirsch, Chang Seok Kang, J. G. Lozano et al. · Journal of Applied Physics · 2002 · 263 citations

Engineering, Materials Engineering, Materials Science +17

Preferential sputtering of oxides: A comparison of model predictions with experimental data

J.B. Malherbe, S. Hofmann, J. M. Sanz · Applied Surface Science · 1986 · 253 citations

Natural Sciences, Materials Engineering, Materials Science +12

Effect of postdeposition annealing on the thermal stability and structural characteristics of sputtered HfO2 films on Si (100)

Gang He, M. Liu, Li Zhu et al. · Surface Science · 2004 · 219 citations

Natural Sciences, Materials Engineering, Materials Science +16

HfO 2 / SiO 2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy

O. Renault, D. Samour, J.-F. Damlencourt et al. · Applied Physics Letters · 2002 · 202 citations

Natural Sciences, Chemistry, Materials Science +17

Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2]

Dina H. Triyoso, R. Liu, D. Roan et al. · Journal of The Electrochemical Society · 2004 · 167 citations

Natural Sciences, Materials Engineering, Materials Science +17