Direct Patterning of the Current Confinement Structure for p-Type Column-III Nitrides by Low-Energy Electron Beam Irradiation Treatment

Abstract

Partial low-energy electron beam irradiation (LEEBI) treatment was used to fabricate UV/blue light-emitting devices based on column-III nitrides having a directly patterned current confinement structure. The newly developed devices show very low leakage reverse current, stable operation at high pulsed current injection, and strong and narrow violet emission at room temperature.