Concepedia

High-quality GaAs MESFET's grown on Silicon substrates by molecular-beam epitaxy

H. Morkoç̌, C. K. Peng, T. Henderson, W. Kopp, R. Fischer, L. P. Erickson, M. Longerbone, R. Youngman

IEEE Electron Device Letters · 1985 · 40 citations · 5 references

Concepts

EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsEpitaxial GrowthHigh-frequency Semiconductor DevicesIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsEpitaxial Film GrowthEpitaxial MaterialsEpitaxial Thin FilmsEpitaxial Thin-film GrowthGaas Microwave Integrated CircuitsMolecular Beam EpitaxySilicon

Abstract

High-quality epitaxial films of 2.3-µm-thick GaAs were grown on 3-in-diam

References

5

Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)

W. I. Wang · Applied Physics Letters · 1984 · 249 citations

Engineering, Materials Engineering, Materials Science +17

Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxy

R. Fischer, W. T. Masselink, John F. Klem et al. · Journal of Applied Physics · 1985 · 194 citations

Engineering, Electrical Engineering, Materials Science +16

Optical properties of GaAs on (100) Si using molecular beam epitaxy

W. T. Masselink, T. Henderson, John F. Klem et al. · Applied Physics Letters · 1984 · 95 citations

Engineering, Materials Engineering, Materials Science +15

Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate

T. Nonaka, Masahiro Akiyama, Yoshihiro Kawarada et al. · Japanese Journal of Applied Physics · 1984 · 73 citations

Engineering, Electrical Engineering, Microelectronics +16

The roles of the surface and bulk of the semi-insulating substrate in low-frequency anomalies of GaAs integrated circuits

S. Makram–Ebeid, P. Minondo · IEEE Transactions on Electron Devices · 1985 · 64 citations

Engineering, Electrical Engineering, Microelectronics +16