L. P. Erickson

Material properties of high-quality GaAs epitaxial layers grown on Si substrates

R. Fischer, H. Morkoç̌, D. A. Neumann et al. · Journal of Applied Physics · 1986 · 270 citations

Materials Engineering, Semiconductors, Materials Science +13

GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy

R. Fischer, Navin Chand, W. Kopp et al. · Applied Physics Letters · 1985 · 122 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Performance of quarter-micron GaAs metal-semiconductor field-effect transistors on Si substrates

M.I. Aksun, H. Morkoç̌, L. F. Lester et al. · Applied Physics Letters · 1986 · 46 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

Characterization of ohmic contacts to InP

L. P. Erickson, Aadil Waseem, G. Y. Robinson · Thin Solid Films · 1979 · 42 citations

Electrical Engineering, Material Analysis, Engineering +5

High-quality GaAs MESFET's grown on Silicon substrates by molecular-beam epitaxy

H. Morkoç̌, C. K. Peng, T. Henderson et al. · IEEE Electron Device Letters · 1985 · 40 citations

Semiconductors, High-quality Gaas Mesfet, Electrical Engineering +10