CMOS 6-T SRAM cell design subject to “atomistic” fluctuations

The impact of intrinsic device fluctuations on CMOS SRAM cell stability

A.J. Bhavnagarwala, Xinghai Tang, J.D. Meindl · IEEE Journal of Solid-State Circuits · 2001 · 685 citations

Engineering, Computer Engineering, Electrical Engineering +17

Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs

Gareth Roy, A. R. Brown, Fikru Adamu-Lema et al. · IEEE Transactions on Electron Devices · 2006 · 278 citations

Engineering, Electrical Engineering, Materials Science +17

Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study

Asen Asenov, G. Slavcheva, A. R. Brown et al. · IEEE Transactions on Electron Devices · 2001 · 227 citations

Engineering, Electrical Engineering, Physics +17

Fluctuation limits & amp; scaling opportunities for CMOS SRAM cells

A.J. Bhavnagarwala, Stephen Kosonocky, C. Radens et al. · 2006 · 162 citations

Engineering, Computer Engineering, Electrical Engineering +17

Impact of intrinsic parameter fluctuations in decanano MOSFETs on yield and functionality of SRAM cells

B. Cheng, S. Roy, G. Roy et al. · Solid-State Electronics · 2005 · 90 citations

Engineering, Computer Engineering, Electrical Engineering +16