G. Slavcheva

Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

Asen Asenov, A. R. Brown, J. H. Davies et al. · IEEE Transactions on Electron Devices · 2003 · 549 citations

Engineering, Electrical Engineering, Physics +17

Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study

Asen Asenov, G. Slavcheva, A. R. Brown et al. · IEEE Transactions on Electron Devices · 2001 · 227 citations

Engineering, Electrical Engineering, Physics +17

FDTD Simulation of the Nonlinear Gain Dynamics in Active Optical Waveguides and Semiconductor Microcavities

G. Slavcheva, John M. Arnold, Richard W. Ziolkowski · IEEE Journal of Selected Topics in Quantum Electronics · 2004 · 72 citations

Natural Sciences, Electrical Engineering, Physics +17

Coupled Maxwell-pseudospin equations for investigation of self-induced transparency effects in a degenerate three-level quantum system in two dimensions: Finite-difference time-domain study

G. Slavcheva, John M. Arnold, Iain Wallace et al. · Physical Review A · 2002 · 60 citations · Full text

Natural Sciences, Physics, Optics +16

Quantum mechanical enhancement of the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs

Asen Asenov, G. Slavcheva, A. R. Brown et al. · 2003 · 27 citations

Engineering, Electrical Engineering, Physics +17