Novel Charge Trap Devices with NCBO Trap Layers for NVM or Image Sensor

Abstract

ZnO or Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1-x</sub> N charge trap device showed large memory window (>7V) with fast P/E speed (plusmn17 V, 100 (_is) and excellent retention (10-year memory window of 6 V with small charge loss rate; ~l/5 of that of Si <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> ). GaN and ZnO trap devices also showed the photo-sensitive programming due to their optoelectronics properties, providing the possibility of developing new type of high performance image sensor (QE ~ 80%)