GaN: from fundamentals to applications

Thermal Annealing Effects on P-Type Mg-Doped GaN Films

Shuji Nakamura, Takashi Mukai, Masayuki Senoh et al. · Japanese Journal of Applied Physics · 1992 · 1.1K citations

Engineering, Materials Engineering, Materials Science +17

Photoluminescence of ion-implanted GaN

J. I. Pánkové, J.A. Hutchby · Journal of Applied Physics · 1976 · 342 citations

Engineering, Materials Engineering, Materials Science +16

Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing Radiation

J. A. Van Vechten, J. D. Zook, R. D. Horning et al. · Japanese Journal of Applied Physics · 1992 · 168 citations

Engineering, Materials Engineering, Materials Science +14

On the origin of free carriers in high‐conducting n‐GaN

W. Seifert, R. Franzheld, E. Butter et al. · Crystal Research and Technology · 1983 · 147 citations

Engineering, Materials Engineering, Materials Science +17

Epitaxial growth and piezoelectric properties of A1N, GaN, and GaAs on sapphire or spinel

M. T. Duffy, C. C. Wang, George D. O’Clock et al. · Journal of Electronic Materials · 1973 · 142 citations

Engineering, Materials Engineering, Materials Science +14