On the origin of free carriers in high‐conducting n‐GaN

W. Seifert, R. Franzheld, E. Butter, +2

Crystal Research and Technology

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringChemical EngineeringEngineering +8

Infrared lattice vibrations of GaN

H. Sobotta, H. Neumann, R. Franzheld, +1

physica status solidi (b)

EngineeringPhysicsApplied PhysicsGan Power DeviceCategoryiii-v Semiconductor +2

Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures

Ulrich Egger, Matthias Schultz, P. Werner, +6

Journal of Applied Physics

Materials ScienceSemiconductorsIi-vi SemiconductorSemiconductor TechnologyEngineering +12

Optical investigations on isovalent δ layers in III-V semiconductor compounds

R. Schwabe, F. Pietag, M. Faulkner, +5

Journal of Applied Physics

Optical MaterialsEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductors +16

Plasma-enhanced chemical vapor deposition of SiO /SiN Bragg reflectors

V. Gottschalch, R. Schmidt, B. Rheinländer, +5

Thin Solid Films

X-ray photoelectron spectroscopic core level shifts of phosphorus in phosphates and native oxide layers on InP(100). Applications of the Auger parameter concept

T. Chassé, Rainer Franke, C. Urban, +3

Journal of Electron Spectroscopy and Related Phenomena

Materials ScienceEngineeringNative Oxide LayersNatural SciencesSpectroscopy +5

MOVPE growth of spontaneously ordered (GaIn) and (AlIn)P layers lattice matched to GaAs substrates

V. Gottschalch, R. Franzheld, Ines Pietzonka, +3

Crystal Research and Technology

EngineeringOptoelectronic DevicesSemiconductorsIi-vi SemiconductorGaas Substrates +16

Surface characterization of ordered (GaIn)P

Ines Pietzonka, R. Franzheld, G. Wagner, +1

Journal of Crystal Growth

Surface CharacterizationEngineeringPhysicsSurface AnalysisSurface Science +1

Organometallic Vapour Phase Epitaxy of Galliumnitride Using Ga(CH₃)₃ · N(CH₃)₃‐Adduct Pyrolysis

W. Seifert, R. Franzheld, Friedrich Bönisch, +1

Crystal Research and Technology

Wide-bandgap SemiconductorInorganic ChemistryElectrical EngineeringAtmospheric Omcvd SystemEngineering +9

Dislocations, twins, and cracks in In1–xGaxP/(001) GaAs heteroepitaxial layers

G. Wagner, V. Gottschalch, R. Franzheld, +2

physica status solidi (a)

EngineeringSevere Plastic DeformationSemiconductorsTwin FormationGaas Heteroepitaxial Layers +14