Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing Radiation

Abstract

We propose a general method to obtain high conductivity of either type in wide gap semiconductors where compensation normally limits conductivity of one or both types. We suggest that the successes of Amano et al . and of Nakamura et al . in obtaining more than 10 18 cm -3 holes in GaN are particular examples of the general process that we propose.