B. Goldenberg - Concepedia

Author

B. Goldenberg

Honeywell (United States)

Also Known As

B. Goldenberg, B. L. Goldenberg, B.L. Goldenberg, Barbara Goldenberg, Barbara L. Goldenberg, Goldenberg, B.L.

Publications

Citations

H-Index

Concepts

All Affiliations

Honeywell (United States)Oklahoma State University University of Illinois Urbana-Champaign North Carolina State University Seoul National University

About

B. Goldenberg is an author at Honeywell (United States) specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	19	1.9K
2	Applied Physics	18	19	1.9K
3	Electrical Engineering	5	5	677
4	Natural Sciences	1	1	20
5	Chemistry	1	1	20

B. Goldenberg

Publications

1.9K

Citations

H-Index

Page 1

	Year	Citations
Temperature dependence of interband transitions in GaN grown by metalorganic chemical vapor deposition W. Shan, T. J. Schmidt, Xing Yang, Applied Physics Letters Materials ScienceSemiconductorsWide-bandgap SemiconductorEngineeringPhysics	1995	263
High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures Guoqing Xu, A. Salvador, W. Kim, Applied Physics Letters Wide-bandgap SemiconductorPhotonicsElectrical EngineeringShort Wavelength OpticEngineering	1997	235
Defeating Compensation in Wide Gap Semiconductors by Growing in H that is Removed by Low Temperature De-Ionizing Radiation J. A. Van Vechten, J. D. Zook, R. D. Horning, Japanese Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringWide Gap SemiconductorsHigh Conductivity	1992	168
Strain effects on excitonic transitions in GaN: Deformation potentials W. Shan, R. J. Hauenstein, A. J. Fischer, Physical review. B, Condensed matter Materials EngineeringMaterials ScienceWide-bandgap SemiconductorEngineeringPhysics	1996	164
Above room temperature near ultraviolet lasing from an optically pumped GaN film grown on sapphire Xing Yang, T. J. Schmidt, W. Shan, Applied Physics Letters Optical MaterialsEngineeringTemperature DependenceLaser ApplicationsLaser Material	1995	156
Mechanisms of band-edge emission in Mg-doped <i>p</i>-type GaN M. Smith, G. D. Chen, J. Y. Lin, Applied Physics Letters SemiconductorsDecay KineticsElectrical EngineeringWide-bandgap SemiconductorEngineering	1996	129
Ultraviolet and violet light-emitting GaN diodes grown by low-pressure metalorganic chemical vapor deposition B. Goldenberg, J. D. Zook, Robert J. Ulmer Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringSolid-state LightingP-n Junction ElectroluminescenceUv Radiation	1993	117
Temperature-dependent absorption measurements of excitons in GaN epilayers A. J. Fischer, W. Shan, J. J. Song, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorOptical MaterialsElectronic DevicesExciton Absorption Linewidth	1997	116
Binding energy for the intrinsic excitons in wurtzite GaN W. Shan, B. D. Little, A. J. Fischer, Physical review. B, Condensed matter Aluminium NitrideWide-bandgap SemiconductorIntrinsic Free ExcitonsEngineeringPhysics	1996	100
Time-resolved exciton luminescence in GaN grown by metalorganic chemical vapor deposition W. Shan, X. C. Xie, J. J. Song, Applied Physics Letters Time-resolved Exciton LuminescenceEngineeringPhotoluminescencePhysicsSingle-crystal Gan Films	1995	98

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